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     Research Journal of Applied Sciences, Engineering and Technology


Impact of Skin Effect, Resistive and Dielectric Losses on Current Estimation and Reliability of ULSI Interconnects

Ming Yao, Xuliang Zhang and Chaoyang Zhao
Department of Electronic Engineering, University of Electronic Science and Technology of China, Chengdu, China
Research Journal of Applied Sciences, Engineering and Technology  2013  2:619-625
http://dx.doi.org/10.19026/rjaset.5.4998  |  © The Author(s) 2013
Received: May 21, 2012  |  Accepted: June 06, 2012  |  Published: January 11, 2013

Abstract

In this study, a series connection system of interconnects and gates is studied. In the system, we focus on skin effect, resistive and dielectric losses in previous level interconnects and the impact of their variations on the fast current estimation and the lifetime calculation of the post level interconnects. The changes in cross-section dimensions of interconnects are used to represent their differences in resistances, dielectric losses and skin effect in actual circuits or to represent the process of Electro Migration (EM). Through the analysis of the voltage transfer function of interconnects, the different roles of skin effect, resistive and dielectric losses in signal attenuation for interconnects of various cross-sections are pointed out. The study shows that the input voltage waveforms of the post level interconnects will change if the cross-section sizes of the previous level interconnects vary. By means of showing the changing tendencies of current and lifetime estimation results affected by the cross-section dimensions of the previous interconnects, we indicate that the fast current and reliability estimation results will not be accurate enough if these effects are not included.

Keywords:

Current estimation, dielectric losses, interconnect, reliability, resistive losses, skin effect,


References


Competing interests

The authors have no competing interests.

Open Access Policy

This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.

Copyright

The authors have no competing interests.

ISSN (Online):  2040-7467
ISSN (Print):   2040-7459
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