Research Article | OPEN ACCESS
New Approach to Determine Vertical Parallel Junction Silicon Solar Cell Parameters
1M. Sane, 2B. Zouma and 1F.I. Barro
1Department of Physics, Semiconductors and Solar Energy Laboratory, Faculty of Science and Technique, Cheikh Anta Diop University, Dakar, Senegal
2Department of Physics, Thermal and Renewable Energies Laboratory, Training and Research Unit in Pure and Applied Sciences, University of Ouagadougou, Burkina Faso
Research Journal of Applied Sciences, Engineering and Technology 2014 24:5288-5292
Received: March 13, 2014 | Accepted: April 11, 2014 | Published: June 25, 2014
Abstract
The aim of this work is to study the electrical behavior of a vertical parallel junction silicon solar cell by mean of impedance spectroscopy. By solving diffusion-recombination equation, the excess minority carrier density expression was established and the photocurrent and the photo voltage were deduced. We plotted Nyquist diagram of the solar cell impedance and gave corresponding electrical circuits. We then introduced impedance spectroscopy method to access for the first time to some electrical parameters of a vertical junction solar cell (series resistance, parallel resistance, capacitance and inductance).
Keywords:
Electrical parameters, spectroscopy, vertical junction,
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Competing interests
The authors have no competing interests.
Open Access Policy
This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
Copyright
The authors have no competing interests.
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ISSN (Online): 2040-7467
ISSN (Print): 2040-7459 |
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