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     Research Journal of Applied Sciences, Engineering and Technology


Investigating a Hypothetical Semiconductor Laser Bar Using a Laser Diode Simulation/Emulation Tool Using Random Levels of Defects

1, 2C.K. Amuzuvi and 1J.C. Attachie
1Department of Electrical and Electronic Engineering, University of Mines and Technology, Tarkwa, Ghana
2 Photonic and Radio Frequency Engineering Group (PRFEG), Electrical Systems and Optics Research Division, Faculty of Engineering, University of Nottingham, Nottingham, NG7 2RD, United Kingdom
Research Journal of Applied Sciences, Engineering and Technology  2014  6:1145-1148
http://dx.doi.org/10.19026/rjaset.7.372  |  © The Author(s) 2014
Received: February 21, 2013  |  Accepted: April 02, 2013  |  Published: February 15, 2014

Abstract

In this study, Barlase, a semiconductor laser diode emulation tool, is used to emulate the by-emitter degradation of high power semiconductor laser diodes. Barlase is a software that uses a LabView control interface. We have demonstrated how Barlase works using a hypothetical laser diode bar (multiple emitters) to validate the usefulness of the tool. A scenario using the hypothetical bar was investigated to demonstrate Barlase as follows: random low-level of defects distributed across the bar. The results of the simulation show the successful implementation of Barlase in the by-emitter analysis of laser diodes.

Keywords:

Band gap energy, by-emitter, defect, degradation, emitter, nonradiative recombination, quantum well, slope efficiency, temperature, threshold current,


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Competing interests

The authors have no competing interests.

Open Access Policy

This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.

Copyright

The authors have no competing interests.

ISSN (Online):  2040-7467
ISSN (Print):   2040-7459
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