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     Research Journal of Applied Sciences, Engineering and Technology


Study on Quantum Efficiency Stability of Reflection-Mode GaN Negative Electronic Affinity Photocathode

Wei Liu, Jiangtao Fu and Guoqiang Zheng
Institute of Electronic Information Engineering, Henan University of Science and Technology, 471003 Luoyang, People
Research Journal of Applied Sciences, Engineering and Technology  2014  5:1057-1060
http://dx.doi.org/10.19026/rjaset.7.358  |  © The Author(s) 2014
Received: February 04, 2013  |  Accepted: February 22, 2013  |  Published: February 05, 2014

Abstract

The aim of this study is to analyze the decaying and recovering mechanism of the quantum efficiency for reflection-mode GaN NEA photocathode. One kind of reflection-mode GaN NEA photocathode is designed and grown in the laboratory. The quantum efficiency curves are obtained immediately and six hours later after the sample is fully activated, the quantum efficiency data at different wavelengths are acquired according to the two different quantum efficiency curves, Through the analysis of experiment result, the inner factors resulting in quantum efficiency decaying are discussed. Taking the factors into consideration, the method of supplementing Cs is applied in recovering the quantum efficiency, the quantum efficiency can be partly recovered. The reason that the quantum efficiency can not be completely recorvered is also anylized.

Keywords:

Negative electron affinity, quantum efficiency, reflection-mode NEA,


References

  1. Allen, G.A., 1971. The performance of negative electron affinity photocathode. J. Phys. D Appl. Phys., 4: 308-317.
    CrossRef    
  2. Antypas, G.A., L.W. James and J.J. Uebbing, 1970. Operation of III-Vsemiconductor photocathodes in the semitransparent mode. J. Appl. Phys., 41(7): 2888-2894.
    CrossRef    
  3. Ettenberg, M., G.H. Olsen and C.J. Nuese, 1976. Effect of gas-phase stoichiometry on the minority-carrier diffusion length in vapor-grown GaAs. Appl. Phys. Lett., 29(3): 141-142.
    CrossRef    
  4. James, L.W., 1974. Calculation of the minority-carrier confinement properties of III-Vsemiconductor heterojunctions (applied to transmission-mode photocathodes). J. Appl. Phys., 45(3): 1326-1335.
    CrossRef    
  5. Liu, Y.Z., J.L. Moll and W.E. Spicer, 1970. Quantum yield of GaAs semitransparent photocathodes. Appl. Phys. Lett., 17(2): 60-62.
    CrossRef    
  6. Machuca, F., Z. Liu, Y. Sun, P. Pianetta, W.E. Spicer and R.F.W. Pearse, 2002. Role of oxygen in semiconductor negative electron affinity photocathodes. J. Vacuum Sci. Technol. B, 20(6): 2721-2725.
    CrossRef    
  7. Su, C.Y., I. Lindau and W.E. Spicer, 1982. Photoemission studies of the oxidation of Cs identification of the multiple structures of oxygen species. Chem. Phys. Lett., 87(6): 523-527.
    CrossRef    
  8. Terekhov, A.S. and D.A. Orlov, 1995. Photoelectron thermalization near the unpinned surface of GaAs (Cs,O) photocathode. Proceeding of the SPIE, 2550: 157-163.
    CrossRef    
  9. Vergara, G., A.H. GoĢmez and W.E. Spicer, 1995. Escape probability for negative electron affinity photocathodes: calculations compared to experiments. Proceeding of the SPIE, 2550: 142-156.
    CrossRef    
  10. Wada, T., T. Nitta and T. Nomura, 1990. Influence of exposure to CO,CO2 and H2O on the stability of GaAs photocathodes. Japanese J. Appl. Phys., 29(10): 2087-209.
    CrossRef    

Competing interests

The authors have no competing interests.

Open Access Policy

This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.

Copyright

The authors have no competing interests.

ISSN (Online):  2040-7467
ISSN (Print):   2040-7459
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