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     Research Journal of Applied Sciences, Engineering and Technology


Quantum Efficiency Effects on Modal Gain, Threshold Current and Threshold Current Density of PbSe/Pb0.934Sr0.066 Se Multiple Quantum Well Structure

Majed Khodr
Department of Electronics and Communications Engineering, American University of Ras Al Khaimah, P.O. Box 10021, Ras Al Khaimah, United Arab Emirates
Research Journal of Applied Sciences, Engineering and Technology  2016  5:607-611
http://dx.doi.org/10.19026/rjaset.12.2689  |  © The Author(s) 2016
Received: October ‎9, ‎2015  |  Accepted: October ‎30, ‎2015  |  Published: March 05, 2016

Abstract

In this study we studied the effects of internal quantum efficiency on PbSe/Pb0.934Sr0.066 Se multiple Quantum well Structure. The calculations were done on the modal gain, threshold current and threshold current density of the system. Inclusion of the theoretical internal quantum efficiency increased the threshold current and threshold current density values by almost 10 times with no effects on the modal gain values. However, when the experimental internal quantum efficiency was included, the above increase was even more. It was included that there is a leakage current above the barrier which is needed to account for in any practical application.

Keywords:

Auger recombination, leakage current, lead salts, quantum efficiency,


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Competing interests

The authors have no competing interests.

Open Access Policy

This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.

Copyright

The authors have no competing interests.

ISSN (Online):  2040-7467
ISSN (Print):   2040-7459
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