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Abstract
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Article Information:
A Comprehensive Evaluation of Drain-side Layout Topologies on the Power nLDMOS ESD/LU Reliabilities
Shen-Li Chen and Min-Hua Lee
Corresponding Author: Shen-Li Chen
Submitted: March 19, 2014
Accepted: May 08, 2014
Published: July 25, 2014 |
Abstract:
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The non-uniform turned-on and low holding-Voltage (Vh) issues are seriously impacted the reliability abilities of an n-channel lateral-diffused power MOSFET (nLDMOS). Therefore, basing on the drain Field-Oxide Device (FOD) structure of an nLDMOS and changing the thin-Oxide Definition (OD) topology for contacts located in the middle region of drain-side will be investigated in this study. The OD structure will renew as some dotted-OD manners. Experimental results show that the dotted-OD layout has a higher Electrostatic Discharge (ESD) capability than that of the FOD structure and the layout type of dotted-OD will affect the ESD capability of an HV component. A uniformly distributed type of dotted-OD will have a highest It2 value, the It2 value is increased about 12% as compared with the Ref. traditional nLDMOS. And, the Vh value will increase with the contacts number increasing within the dotted-OD, which is increased about 28.2% of a dotOD46 device as compared with the traditional nLDMOS. Furthermore, as adding an FODs structure combined with a uniform dotted-OD structure in the drain side will be haven a high ESD capability (about 5.9% increasing) and high LU immunity (25.8% increasing) compared with the traditional nLDMOS DUT. Therefore, it is good both for ESD and Latch-Up (LU) reliability considerations.
Key words: Electrostatic Discharge (ESD), Field-Oxide Device (FOD), holding Voltage (Vh), n-channel Lateral-Diffused MOSFET (LDMOS), Oxide Definition (OD), secondary breakdown current (It2), trigger Voltage (Vt1)
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Cite this Reference:
Shen-Li Chen and Min-Hua Lee, . A Comprehensive Evaluation of Drain-side Layout Topologies on the Power nLDMOS ESD/LU Reliabilities. Research Journal of Applied Sciences, Engineering and Technology, (4): 496-502.
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ISSN (Online): 2040-7467
ISSN (Print): 2040-7459 |
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