Home            Contact us            FAQs
    
      Journal Home      |      Aim & Scope     |     Author(s) Information      |      Editorial Board      |      MSP Download Statistics

     Research Journal of Applied Sciences, Engineering and Technology

    Abstract
2014(Vol.7, Issue:5)
Article Information:

Study on Quantum Efficiency Stability of Reflection-Mode GaN Negative Electronic Affinity Photocathode

Wei Liu, Jiangtao Fu and Guoqiang Zheng
Corresponding Author:  Wei Liu 
Submitted: February 04, 2013
Accepted: February 22, 2013
Published: February 05, 2014
Abstract:
The aim of this study is to analyze the decaying and recovering mechanism of the quantum efficiency for reflection-mode GaN NEA photocathode. One kind of reflection-mode GaN NEA photocathode is designed and grown in the laboratory. The quantum efficiency curves are obtained immediately and six hours later after the sample is fully activated, the quantum efficiency data at different wavelengths are acquired according to the two different quantum efficiency curves, Through the analysis of experiment result, the inner factors resulting in quantum efficiency decaying are discussed. Taking the factors into consideration, the method of supplementing Cs is applied in recovering the quantum efficiency, the quantum efficiency can be partly recovered. The reason that the quantum efficiency can not be completely recorvered is also anylized.

Key words:  Negative electron affinity, quantum efficiency, reflection-mode NEA , , , ,
Abstract PDF HTML
Cite this Reference:
Wei Liu, Jiangtao Fu and Guoqiang Zheng, . Study on Quantum Efficiency Stability of Reflection-Mode GaN Negative Electronic Affinity Photocathode. Research Journal of Applied Sciences, Engineering and Technology, (5): 1057-1060.
ISSN (Online):  2040-7467
ISSN (Print):   2040-7459
Submit Manuscript
   Information
   Sales & Services
Home   |  Contact us   |  About us   |  Privacy Policy
Copyright © 2024. MAXWELL Scientific Publication Corp., All rights reserved