| Abstract |
Article Information:
Analyze of Syncrotronic Radiation Spectrum due to Arrangement of Si (111) and Si (100) Substrates
F. Ashrafi, A. Bahari, S.A. Babanejad and Y. Massoumnia
Corresponding Author: Fereydoun Ashrafi
Key words: Atomic arrangement, nano transistor, semi conductor, substrate, synchrotron radiation technique, thin film,
Vol. 2 , (2): Page No: 153-155 |
| Submitted |
Accepted |
Published |
| 2009 September, 30 |
2010 January, 10 |
2010 March, 10 |
In this research we have studied synchrotronical radiation spectrum of both Si (111) and Si (100)
substrates by using 130 – 131 eV incoming photon energy. Difference in atomic arrangement of these two
substrates orientations is obviously. Atomic arrangement in Si (111) is 7×7 but in Si (100) is 2×1.
Consequently, Si (111) may be used as well Si (100) in nano transistors as a semi conductor device. |
Cite this Reference:
F. Ashrafi, A. Bahari, S.A. Babanejad and Y. Massoumnia, 2010. Analyze of Syncrotronic Radiation Spectrum due to Arrangement of Si (111) and Si (100) Substrates.
Research Journal of Applied Sciences, Engineering and Technology, 2(2): Page No: 153-155. |
|
|
|
 |
ISSN (Online): 2040-7467
ISSN (Print): 2040-7459 |
 |
|
