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Abstract
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Article Information:
Impact of Skin Effect, Resistive and Dielectric Losses on Current Estimation and Reliability of ULSI Interconnects
Ming Yao, Xuliang Zhang and Chaoyang Zhao
Corresponding Author: Ming Yao
Submitted: May 21, 2012
Accepted: June 06, 2012
Published: January 11, 2013 |
Abstract:
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In this study, a series connection system of interconnects and gates is studied. In the system, we focus on
skin effect, resistive and dielectric losses in previous level interconnects and the impact of their variations on the fast
current estimation and the lifetime calculation of the post level interconnects. The changes in cross-section
dimensions of interconnects are used to represent their differences in resistances, dielectric losses and skin effect in
actual circuits or to represent the process of Electro Migration (EM). Through the analysis of the voltage transfer
function of interconnects, the different roles of skin effect, resistive and dielectric losses in signal attenuation for
interconnects of various cross-sections are pointed out. The study shows that the input voltage waveforms of the
post level interconnects will change if the cross-section sizes of the previous level interconnects vary. By means of
showing the changing tendencies of current and lifetime estimation results affected by the cross-section dimensions
of the previous interconnects, we indicate that the fast current and reliability estimation results will not be accurate
enough if these effects are not included.
Key words: Current estimation, dielectric losses, interconnect, reliability, resistive losses, skin effect,
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Abstract
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Cite this Reference:
Ming Yao, Xuliang Zhang and Chaoyang Zhao, . Impact of Skin Effect, Resistive and Dielectric Losses on Current Estimation and Reliability of ULSI Interconnects. Research Journal of Applied Sciences, Engineering and Technology, (02): 619-625.
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ISSN (Online): 2040-7467
ISSN (Print): 2040-7459 |
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