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Abstract
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Article Information:
Electric Equivalent Models of Intrinsic Recombination Velocities of a Bifacial Silicon Solar Cell under Frequency Modulation and Magnetic Field Effect
Nd. Thiam, A. Diao, M. Ndiaye, A. Dieng, A. Thiam, M. Sarr, A.S. Maiga and G. Sissoko
Corresponding Author: Nd. Thiam
Submitted: March 19, 2012
Accepted: April 20, 2012
Published: November 15, 2012 |
Abstract:
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In this study, we present a theoretical study of the photogenerated charge carriers in the base of an
illuminated n+-p-p+ crystalline silicon solar cell under an external magnetic field. By solving the charge carriers’
continuity equation, the dependence of diffusion coefficient and the photocurrent density on the frequency
modulation and magnetic field, is studied. Hence, the study of intrinsic recombination velocities at the junction
Sfo1 and rear side Sbo1 of the solar cell, leads to electric equivalent models.
Key words: Frequency modulation, magnetic field, recombination velocity, silicon solar cell, , ,
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Cite this Reference:
Nd. Thiam, A. Diao, M. Ndiaye, A. Dieng, A. Thiam, M. Sarr, A.S. Maiga and G. Sissoko, . Electric Equivalent Models of Intrinsic Recombination Velocities of a Bifacial Silicon Solar Cell under Frequency Modulation and Magnetic Field Effect. Research Journal of Applied Sciences, Engineering and Technology, (22): 4646-4655.
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ISSN (Online): 2040-7467
ISSN (Print): 2040-7459 |
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